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| EIC1212-8 UPDATED 01/04/2006 12.20-12.70 GHz 8-Watt Internally Matched Power FET Excelics EIC1212-8 .827.010 .669 .120 MIN FEATURES * * * * * * * * 12.20- 12.70GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 27% Power Added Efficiency -46 dBc IM3 at PO = 28.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508.008 .442 .168.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105.008 ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 12.20-12.70GHz VDS = 10 V, IDSQ 2200mA Gain at 1dB Compression f = 12.20-12.70GHz VDS = 10 V, IDSQ 2200mA Gain Flatness f = 12.20-12.70GHz VDS = 10 V, IDSQ 2200mA Power Added Efficiency at 1dB Compression f = 12.20-12.70GHz VDS = 10 V, IDSQ 2200mA Drain Current at 1dB Compression f = 12.20-12.70GHz Output 3rd Order Intermodulation Distortion f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2 VDS = 10 V, IDSQ 65% IDSS f = 12.70GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 38.5 5.5 TYP 39.0 6.5 MAX UNITS dBm dB 0.6 27 2300 -43 -46 4000 -2.5 3.5 5000 -4.0 4.0 o dB % 2600 mA dBc mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 mA 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 100 Ohm gate resistor. 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG Notes: 1. 2. CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Total Power Dissipation Channel Temperature Storage Temperature VALUE 10 V -4.5 V IDSS 80 mA @ 3dB compression 38 W 175C -65/+175C Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. Bias conditions must also satisfy the following equation PT < (TCH -TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) - (POUT - PIN). Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised January 2006 |
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